Infineon · Transistors (BJTs) · MPN BFP193WH6327XTSA1
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| Emitter-Base Voltage(Vebo) | 2V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 12V |
| DC Current Gain | 70 |
| Pd - Power Dissipation | 580mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 80mA |
| Transition frequency(fT) | 8GHz |
| type | NPN |
Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-343-4