Infineon BFP182WE6327

Infineon · Transistors (BJTs) · MPN BFP182WE6327

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Specifications

Collector - Emitter Voltage VCEO12V
DC Current Gain70
Pd - Power Dissipation250mW
Current - Collector(Ic)35mA
Operating Temperature-
Transition frequency(fT)8GHz
typeNPN

Technical details

12V 70 250mW 35mA NPN SOT-343-4 Bipolar RF Transistors RoHS

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