Infineon · Transistors (BJTs) · MPN BFP 840ESD H6327
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| Current - Collector Cutoff | 400nA |
|---|---|
| Transition frequency(fT) | 80GHz |
| Collector - Emitter Voltage VCEO | 2.25V |
| DC Current Gain | 260 |
| Pd - Power Dissipation | 75mW |
| Configuration | Standalone |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 35mA |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | - |
Bipolar (BJT) Transistor NPN 2.25V 35mA 80GHz 75mW Surface Mount SOT-343-4