Infineon BFP 720ESD H6327

Infineon · Transistors (BJTs) · MPN BFP 720ESD H6327

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Specifications

Current - Collector Cutoff400nA
Transition frequency(fT)43GHz
Collector - Emitter Voltage VCEO4.7V
DC Current Gain160
Pd - Power Dissipation100mW
typeNPN
Current - Collector(Ic)30mA
Operating Temperature-
Vce Saturation(VCE(sat))-

Technical details

4.7V 160 NPN 30mA SOT-343-4 Single Bipolar Transistors RoHS

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