Infineon BFP 650F H6327

Infineon · Transistors (BJTs) · MPN BFP 650F H6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)42GHz
Collector - Emitter Voltage VCEO4V
Emitter-Base Voltage VEBO1.2V
DC Current Gain270
Pd - Power Dissipation500mW
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor NPN 4V 150mA 42GHz 500mW TSFP-4

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