Infineon · Transistors (BJTs) · MPN BFP 405F H6327
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| Emitter-Base Voltage(Vebo) | 1.5V |
|---|---|
| Current - Collector Cutoff | 100nA |
| Collector - Emitter Voltage VCEO | 15V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 75mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 25mA |
| Configuration | Common Emitter |
| Transition frequency(fT) | 25GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
Bipolar (BJT) Transistor NPN 15V 25mA 25GHz 75mW TSFP-4