Infineon BFN39E6327

Infineon · Transistors (BJTs) · MPN BFN39E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain40
Pd - Power Dissipation1.5W
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

300V 40 PNP 200mA SOT-223 Single Bipolar Transistors RoHS

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