Infineon BFN 26 E6327

Infineon · Transistors (BJTs) · MPN BFN 26 E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)70MHz
Collector - Emitter Voltage VCEO300V
Emitter-Base Voltage VEBO6V
DC Current Gain30
Pd - Power Dissipation360mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 300V 200mA 70MHz 360mW Surface Mount SOT-23

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