Infineon BFN 19 H6327

Infineon · Transistors (BJTs) · MPN BFN 19 H6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO300V
DC Current Gain25
Pd - Power Dissipation-
type-
Current - Collector(Ic)200mA
Operating Temperature-
Vce Saturation(VCE(sat))500mV

Technical details

300V 25 200mA SOT-89-4 Single Bipolar Transistors RoHS

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