Infineon · Transistors (BJTs) · MPN BF776H6327XTSA1
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| Emitter-Base Voltage(Vebo) | 1.2V |
|---|---|
| Current - Collector Cutoff | 1nA |
| Collector - Emitter Voltage VCEO | 4.7V |
| Pd - Power Dissipation | 200mW |
| DC Current Gain | 180 |
| Current - Collector(Ic) | 50mA |
| Operating Temperature | -55℃~+150℃ |
| Transition frequency(fT) | 46GHz |
| type | NPN |
Bipolar (BJT) Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343-4