Infineon BDP950H6327XTSA1

Infineon · Transistors (BJTs) · MPN BDP950H6327XTSA1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain85
Pd - Power Dissipation5W
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

60V 85 PNP 3A SOT-223-4 Single Bipolar Transistors RoHS

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