Infineon BCX70KE6327HTSA1

Infineon · Transistors (BJTs) · MPN BCX70KE6327HTSA1

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain-
Pd - Power Dissipation330mW
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 250MHz 330mW Surface Mount SOT-23

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