Infineon · Transistors (BJTs) · MPN BCX5516E6327HTSA1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 2W |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | - |
60V 100 NPN 1A SOT-89-4 Single Bipolar Transistors RoHS