Infineon BCX52E6327

Infineon · Transistors (BJTs) · MPN BCX52E6327

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

60V 100 PNP 1A SOT-89-4 Single Bipolar Transistors RoHS

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