Infineon BCW67AE6327

Infineon · Transistors (BJTs) · MPN BCW67AE6327

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO32V
DC Current Gain100
Pd - Power Dissipation330mW
Current - Collector(Ic)800mA
Vce Saturation(VCE(sat))700mV

Technical details

32V 100 800mA SOT-23-3 Single Bipolar Transistors RoHS

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