Infineon BCW60C

Infineon · Transistors (BJTs) · MPN BCW60C

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO32V
DC Current Gain250
Pd - Power Dissipation350mW
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))550mV
Operating Temperature-

Technical details

32V 250 NPN 100mA SOT-23-3 Single Bipolar Transistors RoHS

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