Infineon BCV 62C E6327

Infineon · Transistors (BJTs) · MPN BCV 62C E6327

No reviews yet — be the first to review Infineon BCV 62C E6327.

Specifications

Current - Collector Cutoff5uA
DC Current Gain420
Pd - Power Dissipation300mW
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))650mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 300mW Surface Mount SOT-143

Related Transistors (BJTs)