Infineon · Transistors (BJTs) · MPN BCR512E6327HTSA1
No reviews yet — be the first to review Infineon BCR512E6327HTSA1.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | - |
| Current - Collector(Ic) | 500mA |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 330mW |
| Voltage - Input(Max)(VI(off)) | 1.5V |
| Input Voltage (VI(on)@Ic,Vce) | 1V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 330mW Surface Mount SOT-23