Infineon BCR22PNH6433

Infineon · Transistors (BJTs) · MPN BCR22PNH6433

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)130MHz
DC Current Gain50
Vce Saturation(VCE(sat))300mV
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1.5V
Input Voltage (VI(on)@Ic,Vce)1V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN+PNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

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