Infineon · Transistors (BJTs) · MPN BCR22PNH6327XTSA1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 130MHz |
| DC Current Gain | 50 |
| Vce Saturation(VCE(sat)) | 300mV |
| Output Voltage(VO(on)) | - |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 1.5V@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6