Infineon BCR191WE6327

Infineon · Transistors (BJTs) · MPN BCR191WE6327

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain50
Current - Collector(Ic)100mA
Input Resistor22kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation250mW

Technical details

50V 50 100mA 1 PNP Pre-Biased 250mW SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

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