Infineon BCR169S

Infineon · Transistors (BJTs) · MPN BCR169S

No reviews yet — be the first to review Infineon BCR169S.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain120
Current - Collector(Ic)100mA
Input Resistor3.2kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation250mW

Technical details

50V 120 100mA 2 PNP Pre-Biased Transistors 250mW SOT-363-6 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)