Infineon BCR166E6393HTSA1

Infineon · Transistors (BJTs) · MPN BCR166E6393HTSA1

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)160MHz
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
typePNP
Number1 PNP
Pd - Power Dissipation200mW

Technical details

50V 100mA PNP 1 PNP 200mW Single, Pre-Biased Bipolar Transistors RoHS

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