Infineon · Transistors (BJTs) · MPN BCR166E6393HTSA1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Transition frequency(fT) | 160MHz |
| Emitter-Base Voltage VEBO | 5V |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 300mV |
| type | PNP |
| Number | 1 PNP |
| Pd - Power Dissipation | 200mW |
50V 100mA PNP 1 PNP 200mW Single, Pre-Biased Bipolar Transistors RoHS