Infineon BCR133TE6327

Infineon · Transistors (BJTs) · MPN BCR133TE6327

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Input Resistor13kΩ
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

50V 30 100mA 1 NPN (Pre-Biased) 200mW SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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