Infineon BCR129SE6327

Infineon · Transistors (BJTs) · MPN BCR129SE6327

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain120
Current - Collector(Ic)100mA
Input Resistor13kΩ
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation250mW

Technical details

50V 120 100mA 2 PNP Pre-Biased Transistors 250mW SOT-363-PO Single, Pre-Biased Bipolar Transistors RoHS

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