Infineon BCR08PNH6433XTMA1

Infineon · Transistors (BJTs) · MPN BCR08PNH6433XTMA1

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
DC Current Gain70
Vce Saturation(VCE(sat))300mV
Input Resistor2.2kΩ
Resistor Ratio0.047
Pd - Power Dissipation250mW
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)500mV
Voltage - Input(Max)(VI(off))800mV
Collector - Emitter Voltage VCEO50V
typeNPN+PNP

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

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