Infineon · Transistors (BJTs) · MPN BCR08PNH6327XTSA1
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| DC Current Gain | 70 |
|---|---|
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 0.047 |
| Number | 1 NPN, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 500mV |
| Voltage - Input(Max)(VI(off)) | 800mV |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -65℃~+150℃ |
Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6