Infineon BCR08PNH6327XTSA1

Infineon · Transistors (BJTs) · MPN BCR08PNH6327XTSA1

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Specifications

DC Current Gain70
Input Resistor2.2kΩ
Resistor Ratio0.047
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)500mV
Voltage - Input(Max)(VI(off))800mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6

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