Infineon BCR 505 E6327

Infineon · Transistors (BJTs) · MPN BCR 505 E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)500mA
Input Resistor2.9kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio0.24
Pd - Power Dissipation330mW
Voltage - Input(Max)(VI(off))1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 330mW Surface Mount SOT-23

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