Infineon · Transistors (BJTs) · MPN BCR 35PN H6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 300mV@10mA,0.5mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | 10kΩ |
| Resistor Ratio | 0.21 |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 500mV@2mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 1V@100uA,5V |
| Current - Collector(Ic) | 100mA |
70 250mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS