Infineon · Transistors (BJTs) · MPN BCR 198 E6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 190MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 62kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 1.5V |
| Input Voltage (VI(on)@Ic,Vce) | 1V |
50V 70 100mA 200mW PNP 2 PNP Pre-Biased Transistors SOT-23 Single, Pre-Biased Bipolar Transistors RoHS