Infineon · Transistors (BJTs) · MPN BCR 108W H6327
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 170MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 300mV |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 2.2kΩ |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 0.052 |
| type | NPN |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V |
50V 70 100mA 1 NPN (Pre-Biased) NPN 250mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS