Infineon BCR 108W H6327

Infineon · Transistors (BJTs) · MPN BCR 108W H6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor2.2kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio0.052
typeNPN
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V

Technical details

50V 70 100mA 1 NPN (Pre-Biased) NPN 250mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

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