Infineon BCR 08PN H6727

Infineon · Transistors (BJTs) · MPN BCR 08PN H6727

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Specifications

Pd - Power Dissipation250mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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