Infineon BCP69-25E6327

Infineon · Transistors (BJTs) · MPN BCP69-25E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation3W
typePNP
Number1 PNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

20V 160 PNP 1 PNP 1A SOT-223-4 Single Bipolar Transistors RoHS

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