Infineon BCP55E6327

Infineon · Transistors (BJTs) · MPN BCP55E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain40
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)-
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

60V 40 NPN SOT-223-4 Single Bipolar Transistors RoHS

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