Infineon BCP49E6327

Infineon · Transistors (BJTs) · MPN BCP49E6327

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain10000
Pd - Power Dissipation1.5W
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

60V 10000 NPN 500mA SOT-223-4 Single Bipolar Transistors RoHS

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