Infineon BCM 846S H6327

Infineon · Transistors (BJTs) · MPN BCM 846S H6327

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Specifications

Current - Collector Cutoff5uA
DC Current Gain200
Pd - Power Dissipation250mW
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))90mV
typeNPN
Number2 NPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 65V 100mA 250MHz 250mW Surface Mount SOT-363

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