Infineon BC860CWE6327

Infineon · Transistors (BJTs) · MPN BC860CWE6327

No reviews yet — be the first to review Infineon BC860CWE6327.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain420
Pd - Power Dissipation330mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-

Technical details

45V 420 PNP 100mA SOT-23 Single Bipolar Transistors RoHS

Related Transistors (BJTs)