Infineon BC857CB5000

Infineon · Transistors (BJTs) · MPN BC857CB5000

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation330mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA

Technical details

45V PNP 1 PNP 100mA Single Bipolar Transistors RoHS

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