Infineon BC857BWE6327

Infineon · Transistors (BJTs) · MPN BC857BWE6327

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain220
Pd - Power Dissipation330mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV

Technical details

45V 220 1 PNP PNP 100mA SOT-323 Single Bipolar Transistors RoHS

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