Infineon · Transistors (BJTs) · MPN BC856AE6327
No reviews yet — be the first to review Infineon BC856AE6327.
| Current - Collector Cutoff | 15nA |
|---|---|
| Transition frequency(fT) | 250MHz |
| Collector - Emitter Voltage VCEO | 65V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 125 |
| Pd - Power Dissipation | 330mW |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 300mV |
65V 125 PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS