Infineon BC850CWE6327

Infineon · Transistors (BJTs) · MPN BC850CWE6327

No reviews yet — be the first to review Infineon BC850CWE6327.

Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain-
Pd - Power Dissipation250mW
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))600mV
Operating Temperature-

Technical details

45V NPN 100mA SOT-323-3 Single Bipolar Transistors RoHS

Related Transistors (BJTs)