Infineon BC846PNH6327

Infineon · Transistors (BJTs) · MPN BC846PNH6327

No reviews yet — be the first to review Infineon BC846PNH6327.

Specifications

Current - Collector Cutoff15nA
DC Current Gain290
Pd - Power Dissipation250mW
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)250MHz
Vce Saturation(VCE(sat))200mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN+PNP 65V 100mA 250MHz 250mW Surface Mount SC-70-6(SOT-363)

Related Transistors (BJTs)