Infineon BC817UPNE6327HTSA1

Infineon · Transistors (BJTs) · MPN BC817UPNE6327HTSA1

No reviews yet — be the first to review Infineon BC817UPNE6327HTSA1.

Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation330mW
Collector - Emitter Voltage VCEO45V
DC Current Gain160
Emitter-Base Voltage VEBO5V
Transition frequency(fT)170MHz
typeNPN+PNP
Vce Saturation(VCE(sat))700mV
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 500mA 170MHz 330mW Surface Mount SC-74-6

Related Transistors (BJTs)