Infineon · Transistors (BJTs) · MPN BC817UPNE6327HTSA1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Pd - Power Dissipation | 330mW |
| Collector - Emitter Voltage VCEO | 45V |
| DC Current Gain | 160 |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 170MHz |
| type | NPN+PNP |
| Vce Saturation(VCE(sat)) | 700mV |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | - |
Bipolar (BJT) Transistor NPN+PNP 45V 500mA 170MHz 330mW Surface Mount SC-74-6