Infineon BC817K25E6327HTSA1

Infineon · Transistors (BJTs) · MPN BC817K25E6327HTSA1

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 45V 500mA 170MHz 500mW Surface Mount SOT-23

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