Infineon BC817K-40WE6327

Infineon · Transistors (BJTs) · MPN BC817K-40WE6327

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation500mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV

Technical details

45V 250 1 NPN NPN 500mA SOT-323 Single Bipolar Transistors RoHS

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