Infineon BC817-25B5000

Infineon · Transistors (BJTs) · MPN BC817-25B5000

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation330mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))1.2V

Technical details

45V NPN 500mA Single Bipolar Transistors RoHS

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