Infineon BC808-40W

Infineon · Transistors (BJTs) · MPN BC808-40W

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain250
Pd - Power Dissipation-
typePNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-

Technical details

25V 250 PNP 500mA SOT-23-3-11 Single Bipolar Transistors RoHS

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