HXY MOSFET TIP122

HXY MOSFET · Transistors (BJTs) · MPN TIP122

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Specifications

Current - Collector Cutoff200uA
Vbe Saturation(VBE(sat))-
Vbe On(VBE(on))2.5V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation65W
type-
Current - Collector(Ic)5A
Operating Temperature-
Vce Saturation(VCE(sat))2V;4V

Technical details

Bipolar (BJT) Transistor NPN 100V 5A 65W Through Hole TO-220S

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