HXY MOSFET SS8050W

HXY MOSFET · Transistors (BJTs) · MPN SS8050W

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO25V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 250mW Surface Mount SOT-323

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