HXY MOSFET NSVMMBT3906TT1G-HXY

HXY MOSFET · Transistors (BJTs) · MPN NSVMMBT3906TT1G-HXY

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain300
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation150mW
Number1 PNP
typePNP
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor 40V 200mA 250MHz 150mW Surface Mount SOT-523

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